minority carrier
英 [maɪˈnɒrəti ˈkæriə(r)]
美 [maɪˈnɔːrəti ˈkæriər]
网络 少子; 少数载流子; 少数载子; 少數載流子; 少数载体
双语例句
- Panel of minority carrier lifetime tester is as follows.
少子寿命检测仪面板如下。 - All these three ways can improve the minority carrier lifetime effectively.
三种吸杂方式都能明显提高多晶硅的少子寿命。 - Spring and Autumn period, Zhouzhuang in the territory for the king of the manor shake minority carrier, said the city shake.
春秋战国时期，周庄境内为吴王少子摇的封地，称摇城。 - Soon settlers moved to the plains. The mobility value used is that of the minority carrier.
不久，一些移民迁到平原，所采用的迁移率值都是少子迁移率。 - The minority carrier lifetime(τ) in the base region of a solar cell is one of the most important parameters that affects the conversion efficiency of the device.
太阳电池基区的少数载流子寿命是影响电池效率的重要因素之一。 - The sensitivity for the semiconductor minority carrier lifetime measurement system was determined using microwave photoconductance decay.
对微波光电导法测量半导体少数载流子寿命的测试系统进行灵敏度分析。 - The patented TMBS structure, however, diminishes minority carrier injections to the drift region, minimizing stored charges and improving switching speed.
但已获专利的TMBS结构可消除到漂移区的少数载流子注入，从而最大程度地减少存储的电荷，以及提高转换速度。 - The main surface passivation methods for silicon solar cells at present were compared according to effective lifetime of minority carrier in Si wafers, reflection losses and spectral response of silicon solar cells. The advantages and disadvantages of these surface passivation technologies are analysed and estimated.
通过对硅片的少数载流子有效寿命、硅太阳电池的反射损失和光谱响应这三个方面的研究，比较了目前主要的硅太阳电池表面钝化技术，对这些钝化技术的优缺点进行了分析和评价。 - Relationship between Minority Carrier Life and Morphology with Luminescent Properties in Porous Silicon
少子寿命和表面形貌与多孔硅发光性能的关系 - Spin-on platinum diffusion was used to control lifetime of minority carrier to reduce the reverse recovery time trr.
采用铂液态源扩散降低少数载流子寿命τ从而缩短反向恢复时间trr； - It also analyses emphatically the quantitative relation between the minority carrier lifetimes in the base region under the different conditions of injection and their affects on the forward voltage drop by the theoretical calculation;
通过理论计算，着重分析了大、小注入下基区少子寿命间的定量关系及其对正向压降的影响； - By comparing the frequency performance of Npn and Pup HBT, selective method of minority carrier mobility is suggested.
在比较Npn和PnpHBT的频率性能中给出了目前少子迁移率的选择方法。 - Meanwhile, the relationship between the number of effective grain boundaries, which reduce injecting saturate minority carrier current more than ten percent, and the interfacial state density of grain boundary and grain size has also been presented.
与此同时，本文还得到了能够降低注入饱和少子电流百分之十以上的有效晶粒间界个数与晶粒/晶粒间界界面态密度和晶粒大小之间的关系。 - A new theory about minority carrier injection into polysilicon emitter has been proposed in this paper.
本文提出了一种新的多晶硅发射区少数载流子注入理论。 - On the basis of analysis on the diffusion of minority carrier and the equivalent circuit of the LAPS, the effects of various parameters on LAPS are deduced, and a basis for fabrication of high performance LAPS is set.
详细阐述了LAPS的基本构造，并通过分析LAPS的电路模型及少数载流子的影响得出了各种参数对LAPS的影响，从而为制造高性能的LAPS提供了理论基础。 - The minority carrier recombination in grain boundary and its width are considered.
考虑了晶粒间界厚度和其中的少数载流子复合，假设晶粒间界和晶粒具有不同的少数载流子迁移率和寿命。 - In this paper, the condition under which the surface excess minority carrier density may be treated as a constant is also analysed.
在文中，我们也分析了可以把表面非平衡少子浓度作常数处理的条件。 - Improvement of high frequency photoconductive decay technique for measuring silicon minority carrier lifetime is described.
本文介绍高频光电导衰减法硅单晶少子寿命测试技术的改进。 - Study on measuring system for minority carrier lifetime
少数载流子寿命测试系统研究 - A Study on the Linear Model of Minority Carrier Generation Width in Semiconductors
半导体少子产生区宽度线性模型的研究 - Study on the Computer-aided Measurement of Minority Carrier Generation Lifetime and Its Application
少子产生寿命计算机辅助测量及应用的研究 - The Measurement of Minority Carrier Generation Lifetime and Surface Generation Velocity of Si SiO_2 System Using C V Method
用CV法测量SiSiO2系统的产生寿命和表面产生速度 - Determining minority carrier lifetime and surface generation velocity of a MOS structure by I-T and Q-T measurements
It和Qt法测量MOS结构少子寿命和表面产生速度 - The injecting saturate minority carrier current may be reduced the most effectively by the first grain boundary.
其中，第一个晶粒间界能够最有效地减少注入饱和少数载流子电流。 - Infrared high frequency photoconductive decay method is suited for measuring silicon minority carrier lifetime;
红外高频光电导衰减法测试硅单晶少数载流子寿命是优越的方法； - In order to increase the minority carrier lifetime, the mechanism of phosphorus gettering is studied.
研究了为提高基区少子寿命而进行磷吸收的机理。 - Minority carrier lifetime is an important parameter for PIN diodes.
少子寿命是PIN二极管的重要参数。 - Thus we calculated the non-equilibrium minority carrier diffusion length in the polycrystalline silicon by using the Kronig-Penney's method.
由此，用Kronig-Penney方法计算了多晶硅非平衡少数载流子扩散长度。 - Both the bandgap narrowing and the impurity deionization have influence on majority carrier concentrations, minority carrier concentrations and the characteristics of transistors.
总的说来，禁带宽度变窄和杂质非全离化，都将产生影响：影响多数载流子浓度和少数载流子浓度，影响晶体管的特性。